Title :
High-temperature (130 degrees C) CW operation of 1.53 mu m InGaAsP ridge-waveguide lasers using strained quaternary quantum wells
Author :
Veuhoff, E. ; Rieger, Jana
Abstract :
Minimum threshold current density of 0.57 kA/cm2 and high T0 values up to 74 K were obtained from 400 mu m long broad area lasers with MOVPE grown compressively strained all-quarternary GaInAsP SCH-MQW layer structures for 1.53 mu m emission wavelength. With 3 mu m*400 mu m RW laser diodes (T0>90 K) high-temperature CW operation up to 130 degrees C was achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical waveguides; semiconductor lasers; 1.53 micron; 130 degC; MOVPE grown; broad area lasers; high-temperature CW operation; ridge-waveguide lasers; strained quaternary quantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931125
