Speed and sensitivity limitations of optoelectronic receivers based on MSM photodiode and millimeter-wave HBTs on InP substrate

Author

John, Eugene ; Das, Mukunda B.

Author_Institution

Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

4

Issue

10

fYear

1992

Firstpage

1145

Lastpage

1148

Abstract

Heterostructure bipolar transistors and MSM photodetectors based on compound semiconductors have demonstrated high-frequency performance beyond 100 GHz. By combining these state-of-the-art devices in a realistic integrated optoelectronic receiver, this letter demonstrates that it is possible to achieve a receiver sensitivity of -19.04 dBm at 16 Gb/s at a bit-error-rate of 10/sup -9/. Further improvement of noise and bit-rate can be achieved by designing HBTs with lower junction capacitances.<>

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; photodiodes; phototransistors; 16 Gbit/s; III-V semiconductors; InP; MSM photodiode; bit-error-rate; integrated optoelectronic receiver; junction capacitances; millimeter-wave HBTs; optoelectronic receivers; receiver sensitivity; sensitivity; speed; Absorption; Capacitance; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical receivers; Optical sensors; Optical superlattices; PIN photodiodes; Photodetectors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.163760

Filename

163760