DocumentCode
953320
Title
Multistate Semiconductors
Author
Soble, A.B.
Volume
11
Issue
4
fYear
1964
fDate
12/1/1964 12:00:00 AM
Firstpage
13
Lastpage
15
Abstract
Physical phenomena are divided into three pairs of dual phenomena, electrical and magnetic; thermal and optical; compression and shear. Temperature is termed thermal potential, and pressure, compression potential. Corresponding to thermal energy and thermal potential, the existence of thermal charge is postulated equal to their ratio. Formulas and equations are presented for the shift in centers of electrical charge, analogous to the shift of molecules of a medium in thermoelasticity. The theory presented is a mathematical analysis of two- or three-dimensional variable multistate semiconductor crystals or films which pass or block in two or three mutually perpendicular directions, and can interchange pass and nonpass from one dimension to another. In particular, the theory establishes conditions for conduction in one or two of three mutually perpendicular directions. Since the interchangeability may be controlled, the element acts as a relay. In applying the theory, the shifts of charge centers, that is, the electrical strains, are preassigned. Then the stresses can be calculated which are required to produce the preassigned strains. Thus we know what inputs are necessary to achieve preassigned desired outputs.
Keywords
Crystal relay; Film relay; Multistate element; Multistate relay; Nonelectrical charge; Semiconductors; Three-dimensional relay; Two-dimensional relay; Variable relay; Capacitive sensors; Crystals; Equations; Magnetic semiconductors; Mathematical analysis; Optical films; Potential energy; Semiconductor films; Temperature; Thermoelasticity;
fLanguage
English
Journal_Title
Component Parts, IEEE Transactions on
Publisher
ieee
ISSN
0097-6601
Type
jour
DOI
10.1109/TCP.1964.1135025
Filename
1135025
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