• DocumentCode
    953320
  • Title

    Multistate Semiconductors

  • Author

    Soble, A.B.

  • Volume
    11
  • Issue
    4
  • fYear
    1964
  • fDate
    12/1/1964 12:00:00 AM
  • Firstpage
    13
  • Lastpage
    15
  • Abstract
    Physical phenomena are divided into three pairs of dual phenomena, electrical and magnetic; thermal and optical; compression and shear. Temperature is termed thermal potential, and pressure, compression potential. Corresponding to thermal energy and thermal potential, the existence of thermal charge is postulated equal to their ratio. Formulas and equations are presented for the shift in centers of electrical charge, analogous to the shift of molecules of a medium in thermoelasticity. The theory presented is a mathematical analysis of two- or three-dimensional variable multistate semiconductor crystals or films which pass or block in two or three mutually perpendicular directions, and can interchange pass and nonpass from one dimension to another. In particular, the theory establishes conditions for conduction in one or two of three mutually perpendicular directions. Since the interchangeability may be controlled, the element acts as a relay. In applying the theory, the shifts of charge centers, that is, the electrical strains, are preassigned. Then the stresses can be calculated which are required to produce the preassigned strains. Thus we know what inputs are necessary to achieve preassigned desired outputs.
  • Keywords
    Crystal relay; Film relay; Multistate element; Multistate relay; Nonelectrical charge; Semiconductors; Three-dimensional relay; Two-dimensional relay; Variable relay; Capacitive sensors; Crystals; Equations; Magnetic semiconductors; Mathematical analysis; Optical films; Potential energy; Semiconductor films; Temperature; Thermoelasticity;
  • fLanguage
    English
  • Journal_Title
    Component Parts, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0097-6601
  • Type

    jour

  • DOI
    10.1109/TCP.1964.1135025
  • Filename
    1135025