Title :
Channelled-substrate narrow-stripe GaAs/GaAlAs injection lasers with extremely low threshold currents
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
Abstract :
Channelled-substrate GaAs/GaAlAs injection lasers with very narrow current-confining stripe contacts are described. They have threshold currents less than half those previously reported for this type of device. The best devices had a room-temperature threshold current of only 12 mA pulsed and 14 mA c.w. The lasers also have very good high-temperature performance and c.w. operation has been obtained up to 160°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAs-GaAlAs; channelled substrate; low threshold currents; narrow current confining stripe contacts; semiconductor function lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790586
