Analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs for circuit simulation

Author

Bindu, B. ; DasGupta, Nandita ; DasGupta, Amitava

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India

Volume

53

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1411

Lastpage

1419

Abstract

An analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs is presented. A simple polynomial approximation is used to model the sheet carrier concentration (p_s^H) in the two-dimensional hole gas at the Si/SiGe interface. The interdependence of p_s^H and the hole concentration at the Si/SiO₂ interface (p_s^S) is taken into account in the model, which considers current flow at both the Si/SiGe and the Si/SiO₂ interfaces. This model is applicable to compressively strained SiGe buried-channel heterostructure PMOSFETs as well as tensile-strained surface-channel PMOSFETs. The model has been implemented in SABER, a circuit simulator. The results from the model show an excellent agreement with the experimental data.

Keywords

Ge-Si alloys; MOSFET; semiconductor device models; silicon compounds; 2D hole gas; SABER; Si-SiGe; Si-SiO₂; circuit simulation; drain current; heterojunction FET; heterostructure p-channel MOSFET; polynomial approximation; sheet carrier concentration; surface-channel PMOSFET; Analytical models; Capacitive sensors; Charge carrier processes; Circuit simulation; Germanium silicon alloys; Lattices; MOSFETs; Semiconductor films; Silicon germanium; Substrates; Analytical model; MOSFETs; circuit simulation; heterojunction FET;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.874242

Filename

1637638