DocumentCode
953702
Title
The Effect of Heat Treatment on the Resistivity of Polycrystalline Silicon Films
Author
Fripp, A., Jr.
Author_Institution
Langley Research Center
Volume
11
Issue
3
fYear
1975
fDate
9/1/1975 12:00:00 AM
Firstpage
239
Lastpage
240
Abstract
The resistivity of doped polycrystalline silicon films has been studied as a function of post deposition heat treatments in an oxidizing atmosphere. It was found that a short oxidation cycle may produce a resistivity increase as large as three orders of magnitude in the polycrystalline films. The extent of change was dependent on the initial resistivity and the films´ doping level and was independent of the total oxidation time.
Keywords
Semiconductor device thermal factors; Semiconductor films; Silicon; Atmosphere; Conductivity; Furnaces; Heat treatment; Hydrogen; Optical films; Oxidation; Semiconductor films; Silicon; Substrates;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1975.1135062
Filename
1135062
Link To Document