Title :
Design and evaluation of a planar GaAlAs-GaAs bipolar transistor
Author :
Ankri, D. ; Scavennec, A.
Author_Institution :
Centre National d´Etudes des Telecommunications, Bagneux, France
Abstract :
A planar GaAIAs-GaAs bipolar transistor using a new technological processing technique is presented: a p-type diffusion through the emitter layer is used for base contacting, making possible the use of a low Al content emitter, and leading to low values of the base resistance. A transition frequency of 1 GHz and a maximum oscillation frequency of 450 MHz have been measured on large annular geometry devices.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; gallium compounds; semiconductor device models; semiconductor technology; characteristics; equivalent circuits; evaluation; heterojunction bipolar transistor; large annular geometry devices; low Al content emitter; low base resistance; maximum oscillation frequency 450 MHz; planar GaAlAs-GaAs bipolar transistor; processing technique; semiconductor device models; transition frequency 1 GHz;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800032
