DocumentCode
953763
Title
Design and evaluation of a planar GaAlAs-GaAs bipolar transistor
Author
Ankri, D. ; Scavennec, A.
Author_Institution
Centre National d´Etudes des Telecommunications, Bagneux, France
Volume
16
Issue
1
fYear
1980
Firstpage
41
Lastpage
42
Abstract
A planar GaAIAs-GaAs bipolar transistor using a new technological processing technique is presented: a p-type diffusion through the emitter layer is used for base contacting, making possible the use of a low Al content emitter, and leading to low values of the base resistance. A transition frequency of 1 GHz and a maximum oscillation frequency of 450 MHz have been measured on large annular geometry devices.
Keywords
III-V semiconductors; bipolar transistors; gallium arsenide; gallium compounds; semiconductor device models; semiconductor technology; characteristics; equivalent circuits; evaluation; heterojunction bipolar transistor; large annular geometry devices; low Al content emitter; low base resistance; maximum oscillation frequency 450 MHz; planar GaAlAs-GaAs bipolar transistor; processing technique; semiconductor device models; transition frequency 1 GHz;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800032
Filename
4243816
Link To Document