Title :
Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 ¿m (GaIn)(AsP)/InP d.h. lasers
Author :
Thompson, G.H.B. ; Henshall, G.D.
Author_Institution :
Standard Telecommunication Laboratories, Harlow, UK
Abstract :
A temperature-dependent nonradiative carrier loss is identified in 1.27 ¿m (GaIn)(AsP)/InP d.h. lasers as being responsible for the high sensitivity of threshold current to temperature. It varies according to an activation energy of between 0.09 and 0.13 eV and is superlinear in carrier concentration.
Keywords :
gallium compounds; indium compounds; semiconductor junction lasers; (GaIn)(AsP)/InP DH lasers; 1.27 micron lasers; activation energy; characteristics; nonradiative carrier loss; semiconductor junction lasers; temperature sensitivity; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800033
