• DocumentCode
    953776
  • Title

    Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 ¿m (GaIn)(AsP)/InP d.h. lasers

  • Author

    Thompson, G.H.B. ; Henshall, G.D.

  • Author_Institution
    Standard Telecommunication Laboratories, Harlow, UK
  • Volume
    16
  • Issue
    1
  • fYear
    1980
  • Firstpage
    42
  • Lastpage
    44
  • Abstract
    A temperature-dependent nonradiative carrier loss is identified in 1.27 ¿m (GaIn)(AsP)/InP d.h. lasers as being responsible for the high sensitivity of threshold current to temperature. It varies according to an activation energy of between 0.09 and 0.13 eV and is superlinear in carrier concentration.
  • Keywords
    gallium compounds; indium compounds; semiconductor junction lasers; (GaIn)(AsP)/InP DH lasers; 1.27 micron lasers; activation energy; characteristics; nonradiative carrier loss; semiconductor junction lasers; temperature sensitivity; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800033
  • Filename
    4243817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953776