Transient substrate currents in junction-isolated lateral IGBT

Author

Hardikar, Shyam ; Green, David W. ; Narayanan, Sankara E M

Author_Institution

Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK

Volume

53

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1487

Lastpage

1490

Abstract

In this brief, experimental results of transient substrate currents that occur during clamped inductive switching of a junction-isolated lateral insulated gate bipolar transistor are analyzed. The transient substrate current peak at turn off is broader and higher than the value at turn on. The peak substrate current increases with increasing anode voltage, and anode injection efficiency significantly influences the characteristics of the transient currents. Two-dimensional numerical simulations are used to evaluate the internal dynamics of the device. It is shown that the Kirk effect is responsible for the transient currents during the switching of a lateral insulated gate bipolar transistor.

Keywords

insulated gate bipolar transistors; power semiconductor devices; transients; Kirk effect; anode injection efficiency; clamped inductive switching; insulated gate bipolar transistor; internal dynamics; junction isolation technology; lateral IGBT; power semiconductor devices; power transistors; transient current; transient substrate currents; Anodes; Circuits; Computational Intelligence Society; Current measurement; Insulated gate bipolar transistors; Isolation technology; Power semiconductor switches; Substrates; Transient analysis; Voltage; Junction isolation technology; lateral insulated gate bipolar transistor (LIGBT); power semiconductor devices; power transistors; transient substrate current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.874158

Filename

1637650