DocumentCode
953891
Title
Characteristics of High-Conversion-Efficiency Gallium-Arsenide Solar Cells
Author
Gobat, A.R. ; Lamorte, M.F. ; McIver, G.W.
Author_Institution
Semiconductor and Materials Division, Radio Corporation of America, Somerville, N. J.
Issue
1
fYear
1962
Firstpage
20
Lastpage
27
Abstract
Gallium-arsenide solar cells having conversion-efficiency values greater than 11 per cent are described. Crystalline properties of gallium arsenide are discussed, and cell design considerations are given. Gallium arsenide provides several advantages over silicon in the fabrication of high-efficiency cells having improved temperature characteristics and higher radiation-resistance properties. Typical cell characteristics are presented and compared with those of silicon cells. In addition, data are given to show the effects on gallium arsenide cells of incident solar energy, temperature, radiation, and life.
Keywords
Crystallization; Gallium arsenide; Impurities; Photovoltaic cells; Protons; Semiconductor materials; Silicon; Solar power generation; Temperature; Voltage;
fLanguage
English
Journal_Title
Military Electronics, IRE Transactions on
Publisher
ieee
ISSN
0096-2511
Type
jour
DOI
10.1109/IRET-MIL.1962.5008393
Filename
5008393
Link To Document