• DocumentCode
    953891
  • Title

    Characteristics of High-Conversion-Efficiency Gallium-Arsenide Solar Cells

  • Author

    Gobat, A.R. ; Lamorte, M.F. ; McIver, G.W.

  • Author_Institution
    Semiconductor and Materials Division, Radio Corporation of America, Somerville, N. J.
  • Issue
    1
  • fYear
    1962
  • Firstpage
    20
  • Lastpage
    27
  • Abstract
    Gallium-arsenide solar cells having conversion-efficiency values greater than 11 per cent are described. Crystalline properties of gallium arsenide are discussed, and cell design considerations are given. Gallium arsenide provides several advantages over silicon in the fabrication of high-efficiency cells having improved temperature characteristics and higher radiation-resistance properties. Typical cell characteristics are presented and compared with those of silicon cells. In addition, data are given to show the effects on gallium arsenide cells of incident solar energy, temperature, radiation, and life.
  • Keywords
    Crystallization; Gallium arsenide; Impurities; Photovoltaic cells; Protons; Semiconductor materials; Silicon; Solar power generation; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Military Electronics, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2511
  • Type

    jour

  • DOI
    10.1109/IRET-MIL.1962.5008393
  • Filename
    5008393