Modal analysis of PbSe-clad optical waveguides

Author

Khodr, M.F. ; Sluss, J.J., Jr. ; Batchman, T.E.

Author_Institution

Sch. of Electr. Eng., Oklahoma Univ., Norman, OK, USA

Volume

142

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

183

Lastpage

189

Abstract

A four-layer air-PbSe-BaF₂-CaF₂ structure has been analysed as an optical waveguide at a free space wavelength of 3.4 μm. The structure was found to preserve the unique properties of the more general semiconductor-clad optical waveguides. The critical values of PbSe thickness that lead to regions of selectively high and low attenuation were accurately determined. Field distribution plots were generated and used extensively to explain these effects. Calculations of the coupling coefficients data indicates that the PbSe-clad optical waveguide can be used efficiently in a number of different applications, such as polarisers, optical modulators and IR photodetectors

Keywords

II-VI semiconductors; claddings; infrared detectors; lead compounds; optical films; optical losses; optical modulation; optical polarisers; optical waveguide theory; semiconductor thin films; 3.4 mum; IR photodetectors; PbSe thickness; PbSe-BaF₂-CaF₂; PbSe-clad optical waveguide; PbSe-clad optical waveguides; coupling coefficients data; field distribution plots; four-layer air-PbSe-BaF₂-CaF₂ structure; free space wavelength; high attenuation; low attenuation; modal analysis; optical modulators; optical polarisers; optical waveguide; selectively; semiconductor-clad optical waveguides;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19952012

Filename

465211