Title :
On the Interpretation of Noise in Thick-Film Resistors
Author :
Ringo, J.A. ; Stevens, E.H. ; Gilbert, D.A.
Author_Institution :
Washington State University,Pullman, WA
fDate :
12/1/1976 12:00:00 AM
Abstract :
Noise in thick-film resistors is interpreted by comparison to experimental and theoretical results previously reported for noise in metals and semiconductors. This comparison provides an explanation for the observed dependence of noise on the thick-film-resistor geometry and the 100-fold increase-in noise amplitude over that of metals and semiconductors This comparison indicates that mobile-charge interactions with traps are an inherent feature of charge transport in thick-film resistors.
Keywords :
Noise; Thick-film resistors; Conducting materials; Conductivity; Geometry; Inorganic materials; Noise level; Resistors; Semiconductor device noise; Semiconductor materials; Sheet materials; Surface resistance;
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
DOI :
10.1109/TPHP.1976.1135147
