Generation of nanosecond high-voltage pulses with high repetition rate

The letter presents a circuit for the generation of 50 V pulses with 1.2 ns rise time, 2.5 ns duration and a variable pulse repetition frequency up to 3 MHz based on the effect of avalanche multiplication. The use of standard epitaxial silicon planar transistors instead of selected avalanche types permits safe operation with low sensitivity to temperature variations.