Title :
High performance millimetre Ge-GaAs mixer diode for low l.o. power applications
Author :
Christou, Alex ; Anderson, W.T. ; Davey, J.E. ; Bark, M.L. ; Anand, Y.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Epitaxial Ge/GaAs low-barrier-height Ti-Mo-Au Schottkybarrier diodes exhibit a noise figure of 6.5 dB at 36 GHz and at 0.75 mW of local oscillator (l.o.) power. These diodes represent significant improvement over standard GaAs-Ti diodes at low power levels.
Keywords :
Schottky-barrier diodes; electron device noise; gallium arsenide; mixers (circuits); semiconductor technology; solid-state microwave devices; 0.75 mW local oscillator power microwave mixer diodes; EHF; MM wave mixer diodes; epitaxial Ge/GaAs mixer diodes; low barrier height Ge/GaAs-Ti Schottky barrier diodes; low noise figure diodes; noise figure 6.5 dB at 36 GHz;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800187
