Title :
GaxIn1¿xAsy P1¿y/InP d.h. laser emitting at 1.15 ¿m grown by low-pressure metalorganic c.v.d.
Author :
Hirtz, J.P. ; Duchemin, J.P. ; Hirtz, P. ; de Cremoux, B. ; Pearsall, T. ; Bonnet, Marc
Author_Institution :
Thomson-CSF, LCR, Orsay, France
Abstract :
We report the first successful operation of a GaxIn1¿xAsy P1¿y/InP double heterostructure laser grown by low-pressure metalorganic chemical vapour deposition. This broad-area contact laser, emitting at 1.15 ¿m, has a threshold current density of 5.9 kA/cm2 at room temperature. The efficiency of photoluminescence and electroluminescence below laser threshold is comparable to that measured in structures grown by liquid-phase epitaxy.
Keywords :
III-V semiconductors; chemical vapour deposition; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.15 micron wavelength; DH laser; GaxIn1-xAsyP1-y/InP double heterostructure laser; VPE; chemical vapour deposition; efficiency; electroluminescence; low pressure metalorganic CVD; photoluminescence; room temperature operation; semiconductor lasers; threshold current density 5.9 kA/cm2;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800201
