• DocumentCode
    955432
  • Title

    Temperature Dependence of Junction Transistor Parameters

  • Author

    GÄrtner, Wolfgang W.

  • Author_Institution
    Signal Corps Eng. Labs., Fort Monmouth, N.J.
  • Volume
    45
  • Issue
    5
  • fYear
    1957
  • fDate
    5/1/1957 12:00:00 AM
  • Firstpage
    662
  • Lastpage
    680
  • Abstract
    Based on existing design theories and the known temperature behavior of the semiconductor properties, the temperature variations of transistor characteristics are calculated for four representative types. The results, expressed in terms of four-pole parameters and equivalent circuits, may serve as a guide line in transistor design and temperature compensation of transistor circuits.
  • Keywords
    Cooling; Electric variables; Encapsulation; Equivalent circuits; Germanium alloys; Material properties; P-n junctions; Semiconductor materials; Temperature dependence; Transistors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1957.278416
  • Filename
    4056569