DocumentCode
955432
Title
Temperature Dependence of Junction Transistor Parameters
Author
GÄrtner, Wolfgang W.
Author_Institution
Signal Corps Eng. Labs., Fort Monmouth, N.J.
Volume
45
Issue
5
fYear
1957
fDate
5/1/1957 12:00:00 AM
Firstpage
662
Lastpage
680
Abstract
Based on existing design theories and the known temperature behavior of the semiconductor properties, the temperature variations of transistor characteristics are calculated for four representative types. The results, expressed in terms of four-pole parameters and equivalent circuits, may serve as a guide line in transistor design and temperature compensation of transistor circuits.
Keywords
Cooling; Electric variables; Encapsulation; Equivalent circuits; Germanium alloys; Material properties; P-n junctions; Semiconductor materials; Temperature dependence; Transistors;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1957.278416
Filename
4056569
Link To Document