DocumentCode :
955797
Title :
Theory and Experiments on Shot Noise in Semiconductor Junction Diodes and Transistors
Author :
Guggenbuehl, W. ; Strutt, J.O.
Author_Institution :
Dept. of Advanced Elec. Eng., Swiss Federal Inst. of Tech., Zurich, Switzerland
Volume :
45
Issue :
6
fYear :
1957
fDate :
6/1/1957 12:00:00 AM
Firstpage :
839
Lastpage :
854
Abstract :
This paper presents a general theory of junction diode and transistor shot noise in the region of low-level injection currents as dependent on frequency including lf and hf regions. Equations for noise figures in the three basic transistor connections are derived; these equations are believed to be new as well as in agreement with experimental results. Experimental curves at highlevel injection are presented. Coordination with previous theoretical and experimental data is shown to be satisfactory in the lf region. In the hf region, previous theoretical results, after proper adjustment, coincide with the present ones.
Keywords :
1f noise; Current density; Equations; Fluctuations; Frequency; Hafnium; Low-frequency noise; Semiconductor device noise; Semiconductor diodes; Semiconductor materials;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1957.278483
Filename :
4056610
Link To Document :
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