• DocumentCode
    955896
  • Title

    Characteristics of an Indium-Tin Oxide Transparent Conductor Deposited from Organometallic Compositions

  • Author

    Siuta, Vincent ; Stein, Sidney J.

  • Author_Institution
    Electro Science Labs.,Inc.,Pennsauken, NJ
  • Volume
    1
  • Issue
    3
  • fYear
    1978
  • fDate
    9/1/1978 12:00:00 AM
  • Firstpage
    237
  • Lastpage
    241
  • Abstract
    The characteristics of an organometallic formulation are described that may be suitable for forming the transparent electrodes of liquid crystal and other displays directly by screen printing. When printed on glass and fired at approximately 550°C, a thin film of In2-xSnxO3-ysemiconducting oxide approximately 2500 Å thick is obtained. The sheet resistance of the In2-xSnxO3-yfilm is about 1 k Omeg / Box$^b , and its optical transmission in the visible range is greater than 95 percent.
  • Keywords
    Conducting films; Indium alloys/compounds, devices; Liquid crystal displays; Tin alloys/compounds, devices; Conductors; Electrodes; Glass; Liquid crystal displays; Optical films; Printing; Semiconductivity; Semiconductor films; Semiconductor thin films; Tin;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1978.1135280
  • Filename
    1135280