DocumentCode
956097
Title
The linearity and sensitivity of lateral effect position sensitive devices-an improved geometry
Author
Wang, Wanjun ; Busch-Vishniac, Ilene J.
Author_Institution
Dept. of Mech. Eng., Texas Univ., Austin, TX, USA
Volume
36
Issue
11
fYear
1989
fDate
11/1/1989 12:00:00 AM
Firstpage
2475
Lastpage
2480
Abstract
The authors compare the linearity, sensitivity, and resolution of various lateral effect PSDs (position sensitive devices) by computing as a function of vertical position the output voltage produced by a light spot which tracks a horizontal line. In light of the goal of achieving high linearity, high inherent sensitivity, high resolution, and fast response time while maintaining an ability to operate in a fully reverse-biased condition, the authors have designed a new PSD which has a clover geometry. In this lateral effect PSD a pincushion geometry is modified to include an additional four pairs of point contacts located on or near the centers of the curved boundary lines. Each of the contacts at corners is connected to the two nearest point contacts along the boundary. It is shown that the clover PSD is nearly as linear as the duolateral PSD while holding similar position resolution, but has all of the contacts on a single side of the p-n junction so that the dark current is lower, response time is faster, reverse-bias can be applied more easily, and fabrication cost is lower. The clover inherent sensitivity is five times that of the pincushion and more than half that of the duolateral duoaxis PSD.
Keywords
photoconducting devices; photodetectors; position measurement; sensitivity; clover geometry; curved boundary lines; dark current; lateral effect position sensitive devices; light spot; linearity; output voltage; p-n junction; pincushion geometry; point contacts; resolution; response time; reverse-biased condition; sensitivity; Composite materials; Coordinate measuring machines; Costs; Dark current; Delay; Electrodes; Fabrication; Geometrical optics; Geometry; Linearity; P-n junctions; Photoconductivity; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.43670
Filename
43670
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