Radiation Effects on Silicon Charge-Coupled Devices

The permanent ionizing and neutron radiation-induced degradation in silicon charge-coupled devices, (CCD´s), along with transient upset effects, are reviewed. The operation of a threshold voltage insensitive CCD input technique in a total dose radiation environment is evaluated. CCD structural design rules for decreasing ionizing radiation sensitivity are presented. The increased total ionizing dose tolerance of CCD´s fabricated with a radiation hard oxide is described. Liquid nitrogen temperature irradiation effects in CCD´s are discussed.