Characterization of an InGaAsP semiconductor laser amplifier as a multifunctional device

Author

Bertilsson, K. ; Rörgren, R. ; Andrekson, P.A. ; Eng, S.T.

Author_Institution

Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

11

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

1147

Lastpage

1150

Abstract

Multifunctional properties of an InGaAsP semiconductor laser amplifier have been evaluated. A bit error rate of 10^-9 at 100 Mb/s was obtained using the amplifier as a detector at a received optical power of -27 dBm with simultaneous cavity gain of 16 dB. The bandwidth of the amplifier detector was 300 MHz and the maximum responsivity was 30 V/W. The amplifier had a maximum gain of 29 dB and a very large optical on/off ratio of 50 dB. When the amplifier was used as a switch the cavity gain was 19 dB and the extinction ratio was 22 dB

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical communication equipment; semiconductor lasers; 16 dB; 29 dB; 300 MHz; InGaAsP semiconductor laser amplifier; bandwidth; bit error rate; characterization; detector; extinction ratio; maximum responsivity; multifunctional device; optical on/off ratio; received optical power; simultaneous cavity gain; switch; Bandwidth; Bit error rate; Extinction ratio; Gain; Optical amplifiers; Optical switches; Power amplifiers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.238074

Filename

238074