Title :
Hot-Carrier Effects in Strained n-Channel Transistor With Silicon–Carbon (Si1 − yCy) Source/Drain Stressors and Its Orientation Dependence
Author :
Ang, Kah-Wee ; Wan, Chunlei ; Balasubramanian, Narayanan ; Samudra, Ganesh S. ; Yeo, Yee-Chia
Author_Institution :
Singapore Nat. Univ., Singapore
Abstract :
We report the hot-carrier effects in a novel strained n-channel transistor (n-FET) featuring silicon-carbon source and drain (Si1-yCy S/D) stressors, and its dependence on channel orientations for the first time. Due to strain-induced bandgap reduction, Si1-yCy S/D n-FETs show enhanced impact ionization and therefore more pronounced drive current degradation over a control n-FET. As a consequence of the increased interface state generation, a strained n-FET with [010] channel shows worse hot-carrier reliability over a transistor with the conventional [110] channel, which leads to a larger shift in threshold voltage and subthreshold swing. In addition, a hot-carrier lifetime projection shows a dependence of operating drain voltage on the channel orientation of the strained n-FET.
Keywords :
carbon compounds; field effect transistors; hot carriers; ionisation; semiconductor device reliability; silicon compounds; SiC - Interface; drive current degradation; hot-carrier effects; hot-carrier reliability; impact ionization; interface state generation; orientation dependence; silicon-carbon source/drain stressors; strain-induced bandgap reduction; strained n-FET; strained n-channel transistor; subthreshold swing; threshold voltage; Capacitive sensors; Degradation; Fabrication; Hot carrier effects; Hot carriers; Impact ionization; MOSFETs; Photonic band gap; Strain control; Threshold voltage; Channel orientation; hot-carrier effects; silicon–carbon$(hbox{Si}_{1 - y}hbox{C}_{y})$; strain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.906933