Improving the Electrical Properties of NILC Poly-Si Films Using a Gettering Substrate

Author

Hu, Chen-Ming ; Wu, YewChung Sermon ; Lin, Chi-Ching

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

Volume

28

Issue

11

fYear

2007

Firstpage

1000

Lastpage

1003

Abstract

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate poly-crystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi₂ precipitates being trapped, thus degrading the performance of the device. We proposed using alpha-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film, both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.

Keywords

amorphous semiconductors; elemental semiconductors; getters; leakage currents; nickel compounds; silicon; thin film transistors; NILC poly-Si films; Ni-metal impurity; Ni-metal-induced lateral crystallization; NiSi₂ - Binary; amorphous silicon; electrical properties; gettering substrate; leakage current; poly-crystalline silicon thin-film transistors; Annealing; Contamination; Crystallization; Etching; Gettering; Leakage current; Semiconductor films; Substrates; Temperature; Thin film transistors; Gettering; Ni-metal-induced lateral crystallization (NILC); thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.907267

Filename

4367551