DocumentCode
956513
Title
Use of Ga in metal-GaAs contacts to eliminate large As loss peaks
Author
Sebestyen, T. ; Mojzes, I. ; Szigethy, D.
Author_Institution
Hungarian Academy of Sciences, Research Institute for Technical Physics, Budapest, Hungary
Volume
16
Issue
13
fYear
1980
Firstpage
504
Lastpage
505
Abstract
Arsenic losses from Schottky and ohmic metal contacts to GaAs were quantitatively determined by a quadrupole mass spectrometer as a function of linearly increasing temperature. By adding gallium to the contact metal, the giant peaks found in the arsenic losses could be completely eliminated and the arsenic evaporation losses greatly reduced.
Keywords
III-V semiconductors; Schottky-barrier diodes; arsenic; gallium; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; As loss; Ga; GaAs; Schottky contacts; evaporation losses; ohmic metal contacts; quadrupole mass spectrometer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800352
Filename
4244122
Link To Document