• DocumentCode
    956513
  • Title

    Use of Ga in metal-GaAs contacts to eliminate large As loss peaks

  • Author

    Sebestyen, T. ; Mojzes, I. ; Szigethy, D.

  • Author_Institution
    Hungarian Academy of Sciences, Research Institute for Technical Physics, Budapest, Hungary
  • Volume
    16
  • Issue
    13
  • fYear
    1980
  • Firstpage
    504
  • Lastpage
    505
  • Abstract
    Arsenic losses from Schottky and ohmic metal contacts to GaAs were quantitatively determined by a quadrupole mass spectrometer as a function of linearly increasing temperature. By adding gallium to the contact metal, the giant peaks found in the arsenic losses could be completely eliminated and the arsenic evaporation losses greatly reduced.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; arsenic; gallium; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; As loss; Ga; GaAs; Schottky contacts; evaporation losses; ohmic metal contacts; quadrupole mass spectrometer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800352
  • Filename
    4244122