• DocumentCode
    956552
  • Title

    Low threshold current transverse junction lasers on semi-insulating substrates by m.b.e.

  • Author

    Lee, T.P. ; Burrus, C.A. ; Cho, A.Y.

  • Author_Institution
    Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    16
  • Issue
    13
  • fYear
    1980
  • Firstpage
    510
  • Lastpage
    511
  • Abstract
    Preparation by m.b.e. of GaAs-AlxGa1¿xAs transverse junction lasers on semi-insulating substrates is described. Pulsed current thresholds of 32 mA have been achieved at room temperature (25°C) in initial devices. Single-mode c.w. operation has been achieved with heat-sink temperatures up to 35°C.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; current transverse junction lasers; molecular beam epitaxy; pulsed current threshold; semi insulating substrate; single mode CW operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800356
  • Filename
    4244126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956552