Temperature distribution in semiconductor wafers heated in a vertical diffusion furnace

Author

Hirasawa, Shigeki ; Kieda, Shigekazu ; Watanabe, Tomoji ; Torii, Takuji ; Takagaki, Tetsuya ; Uchino, Toshiyuki

Author_Institution

Hitachi Ltd., Ibaraki, Japan

Volume

6

Issue

3

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

226

Lastpage

232

Abstract

The transient temperature distribution in a row of wafers in a vertical diffusion furnace was calculated as the heating power of the furnace was PID (proportional-integral-derivative)-controlled. Radiative heat transfer was combined with axisymmetric unsteady conduction in wafers and the furnace. With feedforward control of the heating power (which means that when wafers are inserted into the furnace, heater temperature is set higher than the desired heating temperature), the temperature of the wafers reached the heating temperature rapidly. The radiative properties of silicon wafers changed from semitransparent to opaque at 500°C, and the effect of this change on the temperature distribution in the wafers was calculated. It was found that thermoplastic deformation of the wafers is more likely to occur during withdrawal than during insertion

Keywords

furnaces; process control; semiconductor device manufacture; temperature distribution; three-term control; 500 degC; PID control; Si wafers; axisymmetric unsteady conduction; feedforward control; heater temperature; radiative heat transfer; semiconductor wafers; thermoplastic deformation; transient temperature distribution; vertical diffusion furnace; Boats; Cogeneration; Coils; Furnaces; Heat transfer; Resistance heating; Silicon; Substrates; Temperature distribution; Transient analysis;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.238170

Filename

238170