Title :
Good High-Temperature Stability of TiN/ Al2O3/WN/TiN Capacitors
Author :
Pan, Tung-Ming ; Hsieh, Chun-I ; Huang, Tsai-Yu ; Yang, Jian-Ron ; Kuo, Pin-Sun
Author_Institution :
Chang Gung Univ., Taoyuan
Abstract :
For the first time, good thermal stability up to an annealing temperature of 1000degC has been demonstrated for a new TiN/Al2O3/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of ~ 10, low leakage current of 1.2times10-7 A/cm2 at 1 V, and excellent reliability. A thin WN layer was incorporated into the metal-insulator-metal capacitor between the bottom TiN electrode and the Al2O3 dielectric suppressing of interfacial-layer formation at Al2 O3/TiN interfaces and resulting in a smoother Al2O3/TiN interface. This new layer structure is very attractive for deep-trench capacitor applications in DRAM technologies beyond 50 nm.
Keywords :
DRAM chips; MIM devices; aluminium compounds; capacitors; thermal stability; titanium compounds; tungsten compounds; DRAM technology; TiN-Al2O3-WN-TiN - Interface; annealing temperature; deep-trench capacitor; high-temperature stability; layer structure; metal-insulator-metal capacitor; thermal stability; Aluminum oxide; Annealing; Dielectric substrates; Electric variables; Electrodes; MIM capacitors; Random access memory; Temperature; Thermal stability; Tin; $hbox{TiN}/hbox{Al}_{2} hbox{O}_{3}/hbox{WN}/hbox{TiN}$ capacitor structure; Bottom TiN electrode; DRAM; WN layer; metal– insulator–metal (MIM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.906466
