DocumentCode
956707
Title
Thin-Film Al-Al2 O3 -Al Capacitors
Author
Martin, Jacob H.
Author_Institution
Sprague Electric Co.
Volume
1
Issue
1
fYear
1965
fDate
6/1/1965 12:00:00 AM
Firstpage
267
Lastpage
276
Abstract
A process has been developed to produce A1-Al2 03 -Al capacitors with good yields and suitable properties for use in thin-film circuitry. Tests were conducted to determine the effects that a number of variables have on production yields and capacitor characteristics. This paper reports the optimum found for each variable. The largest improvement inyields was brought about by following proper cleaning procedures and controlling dust on the substrate prior to insertion in the vacuum system and during pumpdown.
Keywords
Aluminum deposition; Anodization cycle; Capacitor yields; Cleaning cycles; Counter electrode material; Fabrication variable; Step stress test results; Substrates; Thin-film capacitors; Thin-film circuitry; Wet anodized aluminum; Capacitors; Circuit testing; Cleaning; Glass; Production; Rough surfaces; Substrates; Surface roughness; Thin film circuits; Transistors;
fLanguage
English
Journal_Title
Parts, Materials and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0018-9502
Type
jour
DOI
10.1109/TPMP.1965.1135364
Filename
1135364
Link To Document