• DocumentCode
    956707
  • Title

    Thin-Film Al-Al2O3-Al Capacitors

  • Author

    Martin, Jacob H.

  • Author_Institution
    Sprague Electric Co.
  • Volume
    1
  • Issue
    1
  • fYear
    1965
  • fDate
    6/1/1965 12:00:00 AM
  • Firstpage
    267
  • Lastpage
    276
  • Abstract
    A process has been developed to produce A1-Al203-Al capacitors with good yields and suitable properties for use in thin-film circuitry. Tests were conducted to determine the effects that a number of variables have on production yields and capacitor characteristics. This paper reports the optimum found for each variable. The largest improvement inyields was brought about by following proper cleaning procedures and controlling dust on the substrate prior to insertion in the vacuum system and during pumpdown.
  • Keywords
    Aluminum deposition; Anodization cycle; Capacitor yields; Cleaning cycles; Counter electrode material; Fabrication variable; Step stress test results; Substrates; Thin-film capacitors; Thin-film circuitry; Wet anodized aluminum; Capacitors; Circuit testing; Cleaning; Glass; Production; Rough surfaces; Substrates; Surface roughness; Thin film circuits; Transistors;
  • fLanguage
    English
  • Journal_Title
    Parts, Materials and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9502
  • Type

    jour

  • DOI
    10.1109/TPMP.1965.1135364
  • Filename
    1135364