DocumentCode
956779
Title
Differentiation of source/drain breakdown mechanisms by a single ring transistor measurment
Author
Dunn, Douglas E.
Author_Institution
Dept. of Electr. & Electron. Eng., North Dakota State Univ., Fargo, ND, USA
Volume
6
Issue
3
fYear
1993
fDate
8/1/1993 12:00:00 AM
Firstpage
282
Lastpage
284
Abstract
A measurement technique using a single device to differentiate the effects of junction curvature, surface fields, and isolation implants in MOS source/drain breakdown is described. This use of a single device may complement existing measurement techniques, or be useful for design of test structures in the streets (scribe channels), where the number of devices is pad limited
Keywords
MOS integrated circuits; electric breakdown of solids; integrated circuit testing; MOS breakdown; isolation implants; junction curvature; pad limited; scribe channels; single ring transistor measurment; source/drain breakdown mechanisms; surface fields; test structures; Electric breakdown; Implants; Measurement techniques; Microwave integrated circuits; Neodymium; Semiconductor diodes; Substrates; Surface finishing; Testing; Transistors;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.238181
Filename
238181
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