• DocumentCode
    956852
  • Title

    An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime

  • Author

    Bellone, Salvatore ; Licciardo, Gian Domenico ; Guerriero, Gabriele ; Rubino, Alfredo

  • Author_Institution
    Univ. of Salerno, Salerno
  • Volume
    54
  • Issue
    11
  • fYear
    2007
  • Firstpage
    2998
  • Lastpage
    3006
  • Abstract
    A model of a new technique to measure the spatial distribution of the majority and minority carrier lifetime along epilayers is presented. Being in good agreement with simulations, this model clarifies the behavior of the test structure used in the technique and gives a physical interpretation of the measured quantities.
  • Keywords
    voltage measurement; OCVD-based measurement technique; carrier recombination lifetime; local carrier lifetime; open-circuit voltage decay; spatial distribution; Analytical models; Charge carrier lifetime; Diodes; Measurement techniques; Plasma measurements; Radiative recombination; Semiconductor materials; Spatial resolution; Testing; Voltage measurement; Carrier recombination lifetime; lifetime profile; measurement technique; modeling; negative resistance; open-circuit voltage decay (OCVD);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.907162
  • Filename
    4367586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956852