Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers

The optical properties of strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers with a cavity comprised of a single cleaved facet and a dry etched corner reflector (CR) is described. For comparison, these data are contrasted with data for Fabry-Perot lasers made from the same material and having either two cleaved facets or one cleaved and one straight-etched facet. The etched CR exhibits higher overall reflectivity than the straight-etched and cleaved facet structures, resulting in lower threshold current density and higher efficiency. However, near-field measurements indicate that improvement in reflectivity from the etched CRs is offset by their tendency to favor off-order transverse modes.<>