Proposal of a GaInAs/GaInAsP/InP antiguided filter laser array operating in single longitudinal mode

Author

Ikeda, Tetsu ; Dong, Jie ; Arai, Shigehisa ; Hotta, Masatsugu

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

5

Issue

8

fYear

1993

Firstpage

882

Lastpage

885

Abstract

The authors propose a type of in-phase lateral- and single-longitudinal-mode laser array, the so-called antiguided filter laser array (AFLA), in which an antiguided filter region is inserted between a positive-index-guided multiple-strip array region with a shallow corrugation grating and a high-reflectivity region with deep corrugation. Threshold current as low as 100 mA was obtained for a five-element laser array with active region length of 300 mu m and total emitter width of 18 mu m, using five-pairs of Ga/sub 0.3/In/sub 0.7/As (3 nm)/GaInAsP (10 nm) compressively strained quantum wells.<>

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; optical filters; optical workshop techniques; semiconductor laser arrays; 100 mA; 18 micron; 300 micron; GaInAs-GaInAsP-InP; antiguided filter laser array; antiguided filter region; compressively strained quantum wells; corrugation grating; high-reflectivity region; positive-index-guided multiple-strip array region; single longitudinal mode; threshold current; Arrayed waveguide gratings; Filters; Indium phosphide; Laser modes; Laser theory; Optical arrays; Power lasers; Proposals; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.238242

Filename

238242