• DocumentCode
    957442
  • Title

    Ion implanted GaAs bipolar transistors

  • Author

    Yuan, H.T. ; Doerbeck, F.H. ; McLevige, W.V.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, USA
  • Volume
    16
  • Issue
    16
  • fYear
    1980
  • Firstpage
    637
  • Lastpage
    638
  • Abstract
    GaAs n-p-n bipolar transistors were fabricated by ion implanting Be and Se into bulk n-type substrate material. Devices with mesa collectors exhibit a d.c. current gain hFE ¿ 8 and a reverse bias leakage current of less than 10 nA.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; ion implantation; Be; GaAs bipolar transistors; Se; current gain; mesa collectors; reverse bias leakage current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800442
  • Filename
    4244215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957442