Title :
Electron dynamics in P-Si m.o.s.f.e.t. inversion channels
Author :
Zimmermann, J. ; Fauquembergue, R. ; Charef, M. ; Constant, Eric
Author_Institution :
Universite des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, LA au CNRS 287 and Gréco Microondes, Villeneuve d´Ascq, France
Abstract :
An attempt is presented in modelling at room temperature the carrier dynamics in the inversion layer using a Monte Carlo simulation. The interaction of inversion carriers with the surface is regarded successively as perfectly specular and perfectly diffuse. A comparison of the results with the experimental data of Coen and Muller gives reasonable agreement in a wide range of electric field.
Keywords :
Monte Carlo methods; elemental semiconductors; insulated gate field effect transistors; inversion layers; semiconductor device models; silicon; Monte Carlo simulation; Si MOSFET inversion channels; carrier dynamics; inversion layer; modelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800471
