• DocumentCode
    957714
  • Title

    Electron dynamics in P-Si m.o.s.f.e.t. inversion channels

  • Author

    Zimmermann, J. ; Fauquembergue, R. ; Charef, M. ; Constant, Eric

  • Author_Institution
    Universite des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, LA au CNRS 287 and Gréco Microondes, Villeneuve d´Ascq, France
  • Volume
    16
  • Issue
    17
  • fYear
    1980
  • Firstpage
    664
  • Lastpage
    666
  • Abstract
    An attempt is presented in modelling at room temperature the carrier dynamics in the inversion layer using a Monte Carlo simulation. The interaction of inversion carriers with the surface is regarded successively as perfectly specular and perfectly diffuse. A comparison of the results with the experimental data of Coen and Muller gives reasonable agreement in a wide range of electric field.
  • Keywords
    Monte Carlo methods; elemental semiconductors; insulated gate field effect transistors; inversion layers; semiconductor device models; silicon; Monte Carlo simulation; Si MOSFET inversion channels; carrier dynamics; inversion layer; modelling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800471
  • Filename
    4244245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957714