Title :
Semidistributed neuristor using plasma-coupled modulating transistors
Author :
Skorik, V.A. ; Fursin, G.I.
Author_Institution :
Moscow Physical Technical Institute, Moscow, USSR
Abstract :
Operation of an integrated active line using the plasma-coupled semiconductor device has been confirmed. The neuristor consists of modulating transistors (m.t.) which have a common high-resistivity base region. The construction, principle of operation and results of investigation of this device are described.
Keywords :
bipolar integrated circuits; bipolar transistors; negative resistance; integrated active line; negative resistance; plasma coupled modulating transistor; semidistributed neuristor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800479
