An X-Band Low Phase Noise Free-Running Oscillator Using Substrate Integrated Waveguide Dual-Mode Bandpass Filter With Circular Cavity

Author

Weichen Huang ; Jianyi Zhou ; Peng Chen

Author_Institution

State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China

Volume

25

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

40

Lastpage

42

Abstract

In this letter, a low phase noise free-running oscillator employing a substrate integrated waveguide (SIW) dual-mode bandpass filter (BPF) is presented. As a frequency stabilization element in the feedback loop, the dual-mode SIW BPF is designed at the oscillation frequency. Due to the transmission zero near the upper passband of the filter, a large group delay peak at the upper passband edge can be achieved to improve the phase noise performance significantly. An X-band oscillator using a SiGe HBT has been designed and experimentally demonstrated at 11.571 GHz. Measured results show that, the phase noise of this proposed oscillator is -135.5 dBc/Hz at 1 MHz offset frequency with a figure of merit (FOM) of -206.2 dBc/Hz.

Keywords

Ge-Si alloys; band-pass filters; frequency stability; heterojunction bipolar transistors; microwave filters; microwave oscillators; phase noise; semiconductor materials; substrate integrated waveguides; waveguide filters; FOM; HBT; SIW BPF; SiGe; X-band low phase noise free-running oscillator; circular cavity; feedback loop; figure of merit; frequency 11.571 GHz; frequency stabilization element; group delay; oscillation frequency; substrate integrated waveguide dual-mode bandpass filter; transmission zero; upper passband edge; Band-pass filters; Cavity resonators; Delays; Frequency measurement; Phase noise; Substrates; Bandpass filter (BPF); dual-mode circular cavity; group delay; oscillator; phase noise; substrate integrated waveguide (SIW);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2363690

Filename

6935016