• DocumentCode
    957915
  • Title

    Effect of p-doping on carrier lifetime and threshold current density of 1.3 ¿m GaInAsP/InP lasers by liquid-phase epitaxy

  • Author

    Ng, Wilfred ; Liu, Y.Z.

  • Author_Institution
    Rockwell International, Electronics Research Center, Thousand Oaks, USA
  • Volume
    16
  • Issue
    18
  • fYear
    1980
  • Firstpage
    693
  • Lastpage
    695
  • Abstract
    A correlation was found between the variation of the threshold current density and carrier lifetime with acceptor concentration in the active layer. An injected electron concentration of 2.5¿3 × 1018/cm3, independent of the acceptor concentration in the active layer, was found at the lasing threshold.
  • Keywords
    III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor doping; semiconductor junction lasers; GaInAsP/InP; LPE; acceptor concentration; carrier lifetime; lasing threshold; p-doping; semiconductor doping; semiconductor junction lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800492
  • Filename
    4244267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957915