• DocumentCode
    958094
  • Title

    Neutralised ion beam milling: anomalous sputter yield behaviour

  • Author

    Pitt, C.W. ; Singh, S.P.

  • Author_Institution
    University College London, Department of Electronic & Electrical Engineering, London, UK
  • Volume
    16
  • Issue
    19
  • fYear
    1980
  • Firstpage
    721
  • Lastpage
    722
  • Abstract
    An experimental examination of charge-neutralised ion beam etching of a range of thin-film and bulk materials indicates an oscillatory etch rate function superimposed on the accepted sputter-yield/ion-beam-energy characteristic. The perturbation was affected by the beam neutralisation.
  • Keywords
    aluminium; chromium; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; ion beam effects; metallic thin films; semiconductor thin films; silicon; sputter etching; vacuum deposited coatings; anomalous sputter yield; bulk materials; charge neutralised ion beam etching; neutralised ion beam milling; oscillatory etch rate function; semiconductors; thin film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800512
  • Filename
    4244288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958094