• DocumentCode
    958152
  • Title

    Cryogenic 2¿4 GHz f.e.t. amplifier

  • Author

    Vowinkel, B.

  • Author_Institution
    Universitÿt Bonn, Radioastronomisches Institut, Bonn, West Germany
  • Volume
    16
  • Issue
    19
  • fYear
    1980
  • Firstpage
    730
  • Lastpage
    731
  • Abstract
    A cryogenic single-stage broadband f.e.t. amplifier with an average noise temperature of 34 K (0.5 dB) over a bandwidth of 2 GHz has been developed. The average gain is 12 dB. The best spot noise temperature is 17 K (0.25 dB) at 3.2 GHz, which is competitive with cryogenic parametric amplifiers.
  • Keywords
    cryogenics; field effect transistor circuits; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; bandwidth; broadband amplifier; cryogenic FET amplifier; noise temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800519
  • Filename
    4244295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958152