Title :
Residual charges effect on the annealing behavior of Co-60 irradiated MOS capacitors
Author :
Hwu, Jenn-Gwo ; Lee, Guang-Sheng ; Lee, Si-Chen ; Wang, Way-Seen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
It was experimentally observed that the residual charges of an MOS capacitor after C-V testing can exist for a long time. These charges include a nonzero field at the SiO/sub 2//Si interface, and subsequently affect the annealing behavior due to a charge-temperature effect if the MOS capacitor is left floating during annealing. This problem is solved by a flat-band condition annealing method based on a charge-temperature technique. The annealing kinetics of a Co-60 irradiated MOS capacitor are then studied. A power-law behavior of the annealing kinetics has been obtained for oxide charges annealed at 300 degrees C. Possible explanations are given for this observation.<>
Keywords :
annealing; capacitors; ion beam effects; metal-insulator-semiconductor devices; /sup 60/Co irradiated MOS capacitor; 300 degC; C-V testing; SiO/sub 2/-Si; annealing behavior; annealing kinetics; charge-temperature effect; flat-band condition annealing method; power-law behavior; residual charges; Aging; Annealing; Capacitance-voltage characteristics; Ionizing radiation; Kinetic theory; MOS capacitors; MOS devices; Temperature; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
