• DocumentCode
    958663
  • Title

    A linear dependence of Fmin on frequency for TET´s

  • Author

    Hughes, Brian

  • Author_Institution
    Hewlett-Packard Microwave Technol. Div., Santa Rosa, CA, USA
  • Volume
    41
  • Issue
    6
  • fYear
    1993
  • Firstpage
    979
  • Lastpage
    982
  • Abstract
    The minimum noise figure of a FET, expressed in decibels, is shown to increase approximately linearly with frequency to frequencies approaching the FET´s fmax. This observation is useful for extrapolating noise figures and provides a simple frequency-of-merit
  • Keywords
    equivalent circuits; field effect transistors; semiconductor device models; semiconductor device noise; FET; figure-of-merit; frequency dependence; frequency-of-merit; linear dependence; minimum noise figure; Circuit noise; Equivalent circuits; Frequency dependence; HEMTs; Linear approximation; MODFETs; Microwave FETs; Microwave technology; Resistors; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.238512
  • Filename
    238512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958663