Very high frequency performance of nanometre scale GaAs MESFETs

Author

Adams, Julie A. ; Thayne, I.G. ; Taylor, M.R.S. ; Wilkinson, C.D.W. ; Beaumont, S.P. ; Johnson, N.P. ; Kean, A.H. ; Stanley, C.R.

Author_Institution

Nanoelectron. Res. Center, Glasgow Univ., UK

Volume

36

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2612

Abstract

Summary form only given. GaAs MESFETs with gate lengths from 250 to 30 nm were fabricated and characterized at microwave frequencies. The MESFETs, fabricated on MBE (molecular beam epitaxy) grown layers, were optimized, as far as possible, to reduce short-channel effects. It was found that the inverse proportionality of the gate length with f_T does not hold for sub-100-nm gate-length GaAs MESFETs. In addition, deviation from the simple mod h₂₁ mod versus frequency relationship was observed as the gate length was reduced to less than 100 nm.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; solid-state microwave devices; 30 to 250 nm; GaAs; III-V semiconductors; MBE grown layers; MESFETs; gate lengths; high frequency performance; microwave frequencies; molecular beam epitaxy; nanometre scale; Annealing; Capacitance; Doping; Electrical resistance measurement; Frequency measurement; Gallium arsenide; MESFETs; Microwave frequencies; Molecular beam epitaxial growth; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43722

Filename

43722