Title :
Drift hole mobility in strained and unstrained doped Si1-x Gex alloys
Author :
Manku, Tanjinder ; McGregor, Joel M. ; Nathan, Arokia ; Roulston, David J. ; Noel, J.-P. ; Houghton, D.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
11/1/1993 12:00:00 AM
Abstract :
Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 1015-1019 cm-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×1019 cm-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon
Keywords :
Ge-Si alloys; boron; carrier mobility; electron-phonon interactions; impurity scattering; semiconductor materials; Si1-xGex:B; acoustic scattering; alloy scattering; doping levels; drift hole mobility; ionized-impurity scattering; optical scattering; strained alloys; unstrained alloys; Acoustic scattering; Capacitive sensors; Doping; Electron mobility; Germanium alloys; Germanium silicon alloys; Optical distortion; Optical scattering; Silicon alloys; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
