• DocumentCode
    959701
  • Title

    Mobility study on RIE etched silicon surfaces using SF6/O2 gas etchants

  • Author

    Syau, Tsengyou ; Baliga, B.Jayant

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • Volume
    40
  • Issue
    11
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    1997
  • Lastpage
    2005
  • Abstract
    A methodology for the measurement of the inversion layer mobility on trench gate structures, which allows independent measurement of the sidewall and bottom surface mobilities, is described. Using this method, the inversion layer mobility has been experimentally studied for trenches formed using the SF6/O2 method on diffused base regions of power UMOSFETs. The effect of several post RIE surface treatments on the surface mobility is reported. The measured sidewall mobilities have been found to be comparable to those previously reported for other RIE etchants. These results are of interest for the design of devices using the trench gate (UMOS) technology
  • Keywords
    carrier mobility; elemental semiconductors; insulated gate field effect transistors; inversion layers; power transistors; silicon; sputter etching; O2; RIE; SF6; SF6-O2; Si; Si-SiO2; bottom surface mobilities; diffused base regions; inversion layer mobility; power UMOSFETs; sidewall mobility; surface mobility; trench gate structures; Electron mobility; Etching; Insulated gate bipolar transistors; MOSFET circuits; Measurement techniques; Silicon; Sulfur hexafluoride; Surface cleaning; Surface resistance; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.239740
  • Filename
    239740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=959701