Title :
Non-isothermal analysis of breakdown in SOI transistors
Author :
Apanovich, Y. ; Lyumkis, E. ; Polsky, B. ; Blakey, P.
Author_Institution :
SILVACO Int., Santa Clara, CA, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Non-isothermal device simulation is used to calculate the drain characteristics of an SOI transistor. The breakdown voltage is found to be lower when lattice heating is accounted for, rather than higher, as the temperature dependence of the ionization coefficients would suggest. The results of numerical experiments show that this anomalous behavior is due to the temperature dependence of carrier injection caused by parasitic bipolar action. The lattice temperature in the source region thus has a major influence on breakdown behavior
Keywords :
electric breakdown of solids; hot carriers; impact ionisation; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; I-V characteristics; MOS transistor; SOI transistors; breakdown voltage; carrier injection; drain characteristics; ionization coefficients; kink effect; lattice heating; lattice temperature; nonisothermal device simulation; numerical experiments; parasitic bipolar action; temperature dependence; Current density; Cutoff frequency; Diodes; Doping profiles; Electric breakdown; Electron devices; Impurities; Oscillators; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
