• DocumentCode
    960218
  • Title

    Short optical pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE

  • Author

    Chen, Y.K. ; Tanbun-Ek, T. ; Logan, R.A. ; Tate, A. ; Sergent, A.M. ; Wecht, K.W. ; Sciortino, P.F.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ
  • Volume
    40
  • Issue
    11
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    2118
  • Lastpage
    2119
  • Abstract
    Summary form only given. The authors report on the generation of short optical pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that optical pulses as short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE)
  • Keywords
    distributed Bragg reflector lasers; electro-optical devices; electroabsorption; integrated optics; laser tuning; nonlinear optics; optical modulation; semiconductor lasers; vapour phase epitaxial growth; 1554 nm; 3 GHz; 39 ps; MQW DBR laser; distributed Bragg reflector; electroabsorption modulator; integrated laser/modulator; metal-organic vapor-phase epitaxy; multiple quantum well; narrow-gap active MQW region; nonlinear absorption characteristics; oxide width; selective-area MOVPE; short optical pulses; wavelength-tunable; wide-gap passive MQW region; Absorption; Character generation; Distributed Bragg reflectors; Epitaxial growth; Laser tuning; Optical pulse generation; Optical pulses; Pulse modulation; Quantum well devices; Quantum well lasers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.239792
  • Filename
    239792