Continuous wave visible InGaP/InGaAlP quantum-well surface-emitting laser diodes

Author

Huang, K.F. ; Tai, K. ; Wu, C.C. ; Wynn, J.D.

Author_Institution

Chiao Tung Univ., Hsinchu

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2119

Abstract

Summary form only given. Vertical-cavity surface-emitting lasers in the 0.66 μm visible spectral region were fabricated by metal-organic chemical vapor deposition. The laser structure consists of four In_0.5Ga_0.5P (80 Å)/In_0.5Al _0.5GaP (60Å) quantum wells as the active medium. The quantum wells are located in the middle of a one λ-thick cavity spacer, which is sandwiched between two highly reflective staircase-distributed Bragg reflectors. The continuous wave threshold currents, I_th, are 3.9 and 4.6 mA at -75 and -25°C, respectively, for 15 μm diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I_th of 12 mA at 25°C

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; vapour phase epitaxial growth; -75 to -25 degC; 0.66 micron; 12 mA; 15 micron; 25 degC; 3.9 mA; 4.6 mA; CW output; In_0.5Ga_0.5P-In_0.5Al_0.5GaP; MOCVD; continuous wave threshold currents; metal-organic chemical vapor deposition; quantum-well surface-emitting laser diodes; room temperature pulsed mode operation; staircase-distributed Bragg reflectors; vertical cavity; visible spectral region; Chemical lasers; Chemical vapor deposition; Laser modes; Pulsed laser deposition; Quantum well lasers; Quantum wells; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239793

Filename

239793