High voltage implanted RESURF p-LDMOS using BiCMOS technology

Summary form only given. The authors present a complementary RESURF p-LDMOS in which the n⁺ buried layer is used as an effective substrate and a field implant is introduced to modify the drift charges. The implant conditions in this case, particularly the placements, are studied. After processing, V_B are investigated with different implant placement (L_A, L_B) and field oxide lengths L_F. It is found that although the ion implant covers part of the drift region, the device performance can still be greatly improved. Results show that a long enough implant, compatible with L_F, under the field oxide can result in the maximum, V_B= V_BP. This is verified by simulation results, which show that the peak of the surface electric field is significantly reduced. Results also show that a full length (L_F) implantation under the field oxide can result in the minimum R _on for a fixed L_F