1.1-μm-range InGaAs VCSELs for high-speed optical interconnections

Author

Suzuki, N. ; Hatakeyama, H. ; Tokutome, K. ; Fukatsu, K. ; Yamada, M. ; Anan, T. ; Tsuji, M.

Author_Institution

Syst. Device Res. Labs., NEC Corp., Shiga

Volume

18

Issue

12

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1368

Lastpage

1370

Abstract

We have developed vertical-cavity surface-emitting lasers for optical interconnections operating at 1.07 mum. The active layers of the devices are InGaAs-GaAs multiple quantum-wells, which are suitable for high-speed operation and high reliability. The devices exhibit -3-dB modulation bandwidths up to 19 GHz and no degradation under 70degC, 1000-h automatic power control tests. Error-free 20-Gb/s operations were also achieved

Keywords

III-V semiconductors; automatic testing; gallium arsenide; indium compounds; laser reliability; optical interconnections; quantum well lasers; semiconductor device reliability; semiconductor device testing; surface emitting lasers; 1.07 mum; 1.1 mum; 1000 h; 20 Gbit/s; 70 degC; InGaAs-GaAs; InGaAs-GaAs multiple quantum-wells; VCSEL; automatic power control test; modulation bandwidth; optical interconnection; reliability; vertical-cavity surface-emitting lasers; Bandwidth; Distributed Bragg reflectors; Energy consumption; Indium gallium arsenide; Optical arrays; Optical interconnections; Power system interconnection; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; High-speed modulation; optical interconnections; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.877353

Filename

1638512