DocumentCode
960608
Title
105 times biasing current improvement in an electron wave interference device with vertical superlattices
Author
Tsubaki, Keishi ; Tokura, Yasuhiro ; Fukui, T. ; Saito, Hiroshi ; Susa, N.
Author_Institution
NTT Basic Res. Lab., Tokyo, Japan
Volume
36
Issue
11
fYear
1989
fDate
11/1/1989 12:00:00 AM
Firstpage
2618
Abstract
Summary form only given. The authors have fabricated a novel WBT (washboard transistor) with an (AlAs)14/ (GaAs)34/ vertical superlattice. The vertical superlattice (FLS) has a 10-nm-order periodicity perpendicular to the growth direction. The FLS improves the WBT´s biasing current by about 105 times compared to the previous WBT with a 500-nm grating gate. The modulation-doped AlGaAs/GaAs heterojunction structure with FLSs is grown on [001]-oriented semi-insulating GaAs substrate with a misorientation angle of 1.0 degrees toward the [110] direction. The electron concentration is about 103 larger than that of the previous WBT, resulting from periodicity reduction from 500 to 16.2 nm.
Keywords
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor superlattices; 16.2 nm; AlGaAs-GaAs modulation doped heterojunction; GaAs; [001] substrate; biasing current improvement; electron concentration; electron wave interference device; misorientation angle; periodicity reduction; vertical superlattices; washboard transistor; Electron mobility; Electrons; Epitaxial layers; Gallium arsenide; Gratings; HEMTs; Heterojunctions; Interference; MODFETs; Rail transportation; Resonant tunneling devices; Superlattices; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.43736
Filename
43736
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